The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2014

Filed:

Sep. 14, 2012
Applicants:

Shuhei Kamano, Kanagawa, JP;

Teruhiro Harada, Tokyo, JP;

Inventors:

Shuhei Kamano, Kanagawa, JP;

Teruhiro Harada, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile semiconductor memory device of the charge trap type is initialized by reading the memory cells in the device to determine which charge traps hold less than a predetermined minimum charge and injecting charge into these charge traps until all of the charge traps in the device hold at least the predetermined minimum charge. The charge traps are then programmed selectively with data. The initialization procedure shortens the programming procedure by narrowing the initial distribution of charge in the charge traps, and leads to more reliable reading of the programmed data.


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Kamano, Shuhei. (2014). Nonvolatile semiconductor memory device and programming method (U.S. Patent No. 8750050). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8750050

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