The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Sep. 21, 2011
Myung Cho, Gyeonggi-do, KR;
Seong-je Park, Gyeonggi-do, KR;
Jung-hwan Lee, Gyeonggi-do, KR;
Ji-hwan Kim, Gyeonggi-do, KR;
Beom-seok Hah, Gyeonggi-do, KR;
Myung Cho, Gyeonggi-do, KR;
Seong-Je Park, Gyeonggi-do, KR;
Jung-Hwan Lee, Gyeonggi-do, KR;
Ji-Hwan Kim, Gyeonggi-do, KR;
Beom-Seok Hah, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.