The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Jun. 04, 2012
Yongsik Youn, Cupertino, CA (US);
Adrian Ong, Pleasanton, CA (US);
Sooho Cha, Seoul, KR;
Chan-kyung Kim, Hwaseong-si, KR;
YongSik Youn, Cupertino, CA (US);
Adrian Ong, Pleasanton, CA (US);
Sooho Cha, Seoul, KR;
Chan-kyung Kim, Hwaseong-si, KR;
Abstract
Example embodiments include a resistive type memory current sense amplifier circuit including differential output terminals, first and second input terminals, pre-charge transistors, and current modulating transistors coupled directly to the pre-charge transistors. The pre-charge configuration provides high peak currents to charge the bit line and reference line during a 'ready' or 'pre-charge' stage of operation of the current sense amplifier circuit. The current modulating transistors are configured to operate in a saturation region mode during at least a “set” or “amplification” stage. The current modulating transistors continuously average a bit line current and a reference line current during the “set” or “amplification” stage, thereby improving noise immunity of the circuit. During a “go” or “latch” stage of operation, a logical value “0” or “1” is latched at the differential output terminals based on positive feedback of a latch circuit.