The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Nov. 30, 2011
Sae Miyaji, Kanagawa, JP;
Go Hirano, Tokyo, JP;
Sae Miyaji, Kanagawa, JP;
Go Hirano, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed herein is a method for evaluation of an oxide semiconductor electrode, the method comprising: performing Raman spectrometry on a porous oxide semiconductor layer having a dye adsorbed thereto, thereby acquiring a Raman spectrum having a peak attributable to the dye and a peak attributable to the oxide semiconductor; obtaining from the Raman spectrum a parameter for dye adsorption quantity which is defined by the formula:Parameter for dye adsorption quantity=(Peak intensity attributable to dye)/(Peak intensity attributable to oxide semiconductor);and estimating the amount of the dye adsorbed to the porous oxide semiconductor layer on the basis of the thus obtained parameter for dye adsorption quantity.