The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Feb. 28, 2008
J. Wallace Parce, Palo Alto, CA (US);
Jian Chen, Mountain View, CA (US);
Robert S. Dubrow, San Carlos, CA (US);
William P. Freeman, San Mateo, CA (US);
Erik C. Scher, San Francisco, CA (US);
Jeffery A. Whiteford, Belmont, CA (US);
J. Wallace Parce, Palo Alto, CA (US);
Jian Chen, Mountain View, CA (US);
Robert S. Dubrow, San Carlos, CA (US);
William P. Freeman, San Mateo, CA (US);
Erik C. Scher, San Francisco, CA (US);
Jeffery A. Whiteford, Belmont, CA (US);
Abstract
The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.