The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Jun. 17, 2011
Tae-wook Kang, Seongnam-si, KR;
Chang-yong Jeong, Suwon-si, KR;
Chang-soo Kim, Suwon-si, KR;
Chang-su Seo, Suwon-si, KR;
Moon-hee Park, Gunpo-si, KR;
Tae-Wook Kang, Seongnam-si, KR;
Chang-Yong Jeong, Suwon-si, KR;
Chang-Soo Kim, Suwon-si, KR;
Chang-Su Seo, Suwon-si, KR;
Moon-Hee Park, Gunpo-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.