The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Mar. 14, 2012
Chiaki Kudou, Hyogo, JP;
Chiaki Kudou, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device according to an embodiment of the present invention includes: a semiconductor layerof a wide band gap semiconductor arranged on a principal surface of a substrate; a trencharranged in the semiconductor layer and including a bottom surface, a plurality of main side surfaces, and a plurality of corner side surfaces each connecting together two adjacent main side surfaces; a gate insulating filmarranged on the bottom surface, the main side surfaces and the corner side surfaces of the trench; and a gate electrodearranged in the trench, wherein the semiconductor layer includes a drift regionof a first conductivity type, and a body regionof a second conductivity type arranged on the drift region; the trench runs through the body regionand has the bottom surface inside the drift region; the corner side surfaces of the trench do not have a depressed portion; the gate insulating filmis thicker on the corner side surfaces of the trench than on the main side surfaces of the trench; and a portion of the gate insulating filmthat is located on the corner side surfaces is a first insulating layer, and a portion of the gate insulating filmthat is located on the main side surfaces is a second insulating layer