The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Mar. 18, 2013
SK Hynix Inc., Gyeonggi-do, KR;
Hyun Min Lee, Gyeonggi-do, KR;
Jung Taik Cheong, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A phase-change random access memory device and a method of manufacturing the same are provided. The method includes providing a semiconductor substrate including a heating electrode, forming an interlayer insulating layer including a preliminary phase-change region on the semiconductor substrate, reducing a diameter of an inlet portion of the preliminary phase-change region to be smaller than that of a bottom portion of the preliminary phase-change region, filling an insulating layer having a void in the preliminary phase-change region using a difference between the diameter of the inlet portion and the diameter of the bottom portion, removing the insulating layer to an interface between the inlet portion and the bottom portion, thereby forming a key hole exposing the heating electrode, and forming a phase-change material layer to be buried in the key hole and the preliminary phase-change region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile