The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Aug. 06, 2012
Applicants:
Toshiyuki Takizawa, Kyoto, JP;
Tetsuzo Ueda, Osaka, JP;
Inventors:
Toshiyuki Takizawa, Kyoto, JP;
Tetsuzo Ueda, Osaka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
Abstract
The transistor includes an underlying layerformed on a substrate, and a first layer (including an operation layer) made of a nitride semiconductor formed on the underlying layer. The underlying layeris a multilayered structure including a plurality of stacked nitride semiconductor layers. The underlying layerincludes a transition-metal-containing layer containing at least one of cobalt, nickel, ruthenium, osmium, rhodium, or iridium which is a transition metal.