The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Apr. 06, 2011
Ji-hyun Jeong, Seoul, KR;
Jaehee OH, Seongnam-si, KR;
Heung Jin Joo, Suwon-si, KR;
Sung-ho Eun, Seoul, KR;
Ji-Hyun Jeong, Seoul, KR;
JaeHee Oh, Seongnam-si, KR;
Heung Jin Joo, Suwon-si, KR;
Sung-Ho Eun, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A nonvolatile memory device includes a substrate and a first insulating layer on the substrate. The first insulating layer includes a first opening therein. A lower electrode is provided in the first opening and protrudes from a surface of the first insulating layer outside the first opening. An electrode passivation pattern is provided on a sidewall of the lower electrode that protrudes from the surface of the first insulating layer. A second insulating layer is provided on the first insulating layer and includes a second opening therein at least partially exposing the lower electrode. A variable resistance material layer extends into the second opening to contact the lower electrode. The electrode passivation layer electrically separates the sidewall of the lower electrode from the variable resistance material layer. The electrode passivation pattern is formed of a material having an etching selectivity to that of the second insulating layer. Related fabrication methods are also discussed.