The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Feb. 22, 2010
Norihiko Yamaguchi, Kanagawa, JP;
Satoshi Taniguchi, Kanagawa, JP;
Hiroko Miyashita, Kanagawa, JP;
Yasuhiro Terai, Kanagawa, JP;
Norihiko Yamaguchi, Kanagawa, JP;
Satoshi Taniguchi, Kanagawa, JP;
Hiroko Miyashita, Kanagawa, JP;
Yasuhiro Terai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer.