The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Jun. 24, 2009
Mohamed Benwadih, Champigny-sur-Marne, FR;
Christophe Serbutoviez, Voiron, FR;
Mohamed Benwadih, Champigny-sur-Marne, FR;
Christophe Serbutoviez, Voiron, FR;
Commissariat à l'Energie Atomique, Paris, FR;
Abstract
The present invention relates to an organic transistor comprising a conductive element which forms a drain; a conductive element which forms a source located away from the drain; a conductive element which forms a gate having a surface which faces the drain and a surface which faces the source; a semiconducting layer which is in contact with the drain and the source; and a dielectric layer located between, firstly, the gate and, secondly, the source and the drain with the dielectric layer having a dielectric permittivity which varies depending on its thickness. According to the invention, the dielectric layer comprises a layer of a first dielectric material having a dielectric permittivity of less than four in which there is formed, at least between said opposite-facing surfaces, a volume of a second material, said volume having an overall cross-section which tapers from gate towards the space between drain and source and in that the relative dielectric permittivity of the second material exceeds four.