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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8748317 B1

PDFFull Text
Date of Patent:
Jun. 10, 2014

Filed:

Aug. 03, 2012

Method of manufacturing a semiconductor device including a dielectric structure

Applicants:

Gerhard Schmidt, Wernberg, AT;

Daniel Schloegl, Villach, AT;

Marcella Johanna Hartl, Drobollach, AT;

Philipp Sebastian Koch, Villach, AT;

Roland Strasser, Feld am See, AT;

Inventors:

Gerhard Schmidt, Wernberg, AT;

Daniel Schloegl, Villach, AT;

Marcella Johanna Hartl, Drobollach, AT;

Philipp Sebastian Koch, Villach, AT;

Roland Strasser, Feld am See, AT;

Assignee:

Infineon Technologies Austria AG, Villach, AT;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Shamim Ahmed

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); B24B 37/04 (2012.01);
U.S. Cl.
CPC ...
H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/02024 (2013.01); H01L 21/304 (2013.01); B24B 37/042 (2013.01);
Abstract

A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of the partially cured dielectric layer is removed using a chemical mechanical polishing process. Then the curing of remnant portions of the partially cured dielectric layer is continued to form a dielectric structure. The partially cured dielectric layer shows high removal rates during chemical mechanical polishing. With remnant portions of the dielectric layer provided in cavities, high volume insulating structures can be provided in an efficient manner.

Find Patent Forward Citations

Schmidt, Gerhard. (2014). Method of manufacturing a semiconductor device including a dielectric structure (U.S. Patent No. 8748317). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8748317

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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