The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Sep. 08, 2009
Jonathan R. Tischler, Bnei Brak, IL;
Elizabeth R. Young, Cambridge, MA (US);
Daniel G. Nocera, Winchester, MA (US);
Vladimir Bulovic, Lexington, MA (US);
Jonathan R. Tischler, Bnei Brak, IL;
Elizabeth R. Young, Cambridge, MA (US);
Daniel G. Nocera, Winchester, MA (US);
Vladimir Bulovic, Lexington, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
The disclosed device is a solid state organic semiconductor VCSEL in which the microcavity is composed of metal and dielectric mirrors and the gain layer is only λ/2n thick. The gain layer comprises a thermally evaporated 156.7 nm thick film of the laser dye DCM doped (2.5% v/v) into an Alqhost matrix. The microcavity consists of 2 mirrors, a dielectric Bragg reflector (DBR) sputter-coated onto a quartz substrate as the mirror through which the organic gain layer is optically excited and laser emission is collected and a silver mirror that is thermally evaporated on top of the Alq:DCM film. The device exhibits laser action from the DCM both when the DCM molecules are excited directly at 535 nm and via Förster Resonance Energy Transfer (FRET) from the Alq(excited at 404 nm) with laser thresholds of 4.9 μJ/cmand 14.2 μJ/cmrespectively.