The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2014

Filed:

Dec. 11, 2012
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Byung Ryul Kim, Icheon-si, KR;

Cheul Hee Koo, Icheon-si, KR;

Duck Ju Kim, Icheon-si, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/00 (2006.01); G11C 13/00 (2006.01); G11C 8/08 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 7/00 (2013.01); G11C 8/08 (2013.01);
Abstract

A nonvolatile memory device including a plurality of memory cells arranged at a region where a word line and a bit line cross each other, a voltage generator configured to generate a program voltage to apply to the word line by increasing the program voltage by an increment whenever a program loop is repeated, a current sensing check unit configured to compare a number of failed memory cells among the memory cells to first and second reference values, and a control logic configured to control the voltage generator to change the increment according to the comparison result of the current sensing check unit.


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