The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8743601 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 03, 2014

Filed:

Feb. 29, 2012
Applicant:

Kyoichi Suguro, Yokohama, JP;

Inventor:

Kyoichi Suguro, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/16 (2013.01);
Abstract

In accordance with an embodiment, a non volatile semiconductor memory device includes a substrate, a first electrode, a functional film, and a second electrode. The first electrode is provided on the substrate. The functional film is located on the first electrode and serves as a storage medium. The second electrode is provided on the functional film or in the functional film, and has a convex curved upper surface.


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Suguro, Kyoichi. (2014). Non volatile semiconductor memory device and manufacturing method thereof (U.S. Patent No. 8743601). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8743601

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