The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Jun. 07, 2012
Jae Woo Park, Seongnam-si, KR;
Je Hun Lee, Seoul, KR;
Byung Du Ahn, Hwaseong-si, KR;
Sei-yong Park, Suwon-si, KR;
Jun Hyun Park, Suwon-si, KR;
Gun Hee Kim, Chungbuk, KR;
Ji Hun Lim, Goyang-si, KR;
Kyoung Won Lee, Ansan-si, KR;
Toshihiro Kugimiya, Kobe, JP;
Aya Miki, Kobe, JP;
Shinya Morita, Kobe, JP;
Tomoya Kishi, Kobe, JP;
Hiroaki Tao, Kobe, JP;
Hiroshi Goto, Kobe, JP;
Jae Woo Park, Seongnam-si, KR;
Je Hun Lee, Seoul, KR;
Byung Du Ahn, Hwaseong-si, KR;
Sei-Yong Park, Suwon-si, KR;
Jun Hyun Park, Suwon-si, KR;
Gun Hee Kim, Chungbuk, KR;
Ji Hun Lim, Goyang-si, KR;
Kyoung Won Lee, Ansan-si, KR;
Toshihiro Kugimiya, Kobe, JP;
Aya Miki, Kobe, JP;
Shinya Morita, Kobe, JP;
Tomoya Kishi, Kobe, JP;
Hiroaki Tao, Kobe, JP;
Hiroshi Goto, Kobe, JP;
Samsung Display Co, Ltd., Yongin, Gyeonggi-Do, KR;
Kobe Steel, Ltd., Kobe-Shi, Hyogo, JP;
Abstract
A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.