The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Sep. 11, 2012
Takeshi Kishida, Tokyo, JP;
Takeshi Kishida, Tokyo, JP;
Other;
Abstract
A semiconductor device according to the invention includes: a first region on a semiconductor substrate, in which a first transistor is formed, the first transistor including first gate insulating filmcontaining a high dielectric constant material and first metal gate electrodeformed on first gate insulating film; a second region adjacent to the first region on the semiconductor substrate, in which a second transistor is formed, the second transistor including second gate insulating filmand second metal gate electrodeformed on the second gate insulating film, a layered structure of electrode materials of the second transistor being different from a layered structure of electrode materials of the first transistor; and a first and a second line, the lines being of different potentials, wherein a border between the first and the second region overlaps with at most only the first or the second line.