The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Oct. 29, 2009
Shizuki Nakajima, Tokyo, JP;
Hiroyuki Nagai, Tokyo, JP;
Yuji Shirai, Tokyo, JP;
Hirokazu Nakajima, Tokyo, JP;
Chushiro Kusano, Tokyo, JP;
Yu Hasegawa, Tokyo, JP;
Chiko Yorita, Fujisawa, JP;
Yasuo Osone, Tsuchiura, JP;
Shizuki Nakajima, Tokyo, JP;
Hiroyuki Nagai, Tokyo, JP;
Yuji Shirai, Tokyo, JP;
Hirokazu Nakajima, Tokyo, JP;
Chushiro Kusano, Tokyo, JP;
Yu Hasegawa, Tokyo, JP;
Chiko Yorita, Fujisawa, JP;
Yasuo Osone, Tsuchiura, JP;
Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto, JP;
Abstract
In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.