The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Nov. 09, 2007
Yoshiaki Hisamoto, Tokyo, JP;
Atsushi Narazaki, Tokyo, JP;
Hitoshi Uemura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A power semiconductor device of the present invention has an active region and an electric field reduction region and includes: an emitter region of a first conductivity type; a base region of a second conductivity type in contact with the emitter region; an electrical strength providing region of the first conductivity type in contact with the base region; a collector region of the second conductivity type in contact with the electrical strength providing region; and a collector electrode in contact with the collector region; wherein the collector region is disposed on both a active region and a electric field reduction region each containing a dopant of the second conductivity type, and the collector region disposed on the electric field reduction region includes a region having a lower density of carriers of the second conductivity type than the collector region disposed on the active region.