The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Sep. 13, 2012
Tatsuo Morita, Kyoto, JP;
Daisuke Ueda, Kyoto, JP;
Yasuhiro Uemoto, Toyama, JP;
Tetsuzo Ueda, Osaka, JP;
Tatsuo Morita, Kyoto, JP;
Daisuke Ueda, Kyoto, JP;
Yasuhiro Uemoto, Toyama, JP;
Tetsuzo Ueda, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.