The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Oct. 14, 2011
Makoto Kitabatake, Nara, JP;
Masao Uchida, Osaka, JP;
Makoto Kitabatake, Nara, JP;
Masao Uchida, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor element according to the present invention can perform both a transistor operation and a diode operation via its channel layer. If the potential Vgs of its gate electrodewith respect to that of its source electrodeis 0 volts, then a depletion layer with a thickness Dc, which has been depleted entirely in the thickness direction, is formed in at least a part of the channel layerdue to the presence of a pn junction between a portion of its body regionand the channel layer, and another depletion layer that has a thickness Db as measured from the junction surface of the pn junction is formed in that portion of the body region. If the dielectric constant of the wide bandgap semiconductor is identified by ∈s, the dielectric constant and the thickness of the insulating filmare identified by ∈i and Di, respectively, the sum of Dc and Db is identified by Ds, and the absolute value of the turn-on voltage of the diode is identified by Vf0, then Ds<Di·∈s/(∈i(2/Vf0−1)) is satisfied.