The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Sep. 22, 2011
Applicants:
Jae-hwan OH, Osan-si, KR;
Won-kyu Lee, Seoul, KR;
Seong-hyun Jin, Suwon-si, KR;
Young-jin Chang, Yongin-si, KR;
Jae-beom Choi, Suwon-si, KR;
Inventors:
Jae-Hwan Oh, Osan-si, KR;
Won-Kyu Lee, Seoul, KR;
Seong-Hyun Jin, Suwon-si, KR;
Young-Jin Chang, Yongin-si, KR;
Jae-Beom Choi, Suwon-si, KR;
Assignee:
Samsung Display Co., Ltd., Giheung-Gu, Yongin, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0264 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.