The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Jan. 11, 2013
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Yoshikazu Ooshika, Tokyo, JP;
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Abstract
A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate includes a substrate, an AlN buffer layer, a first superlattice laminate, a second superlattice laminate and a III nitride laminate in this order. The III nitride laminate includes an active layer including an AlGaN (0.03≦α) layer. The first superlattice laminate includes AlGaN layers and AlGaN (0.9<b≦1) layers which are alternately stacked, where α(alpha)<a and a<b. The second superlattice laminate includes repeated layer sets each having an AlGaN layer, an AlGaN layer, and an AlGaN (0.9<z≦1) layer, where α(alpha)<x and x<y<z.