The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Mar. 08, 2012
Applicants:
Tomofumi Susaki, Tokyo, JP;
Hideo Hosono, Tokyo, JP;
Inventors:
Tomofumi Susaki, Tokyo, JP;
Hideo Hosono, Tokyo, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
The SrTiObuffer layer is formed by lamination of the SrOlayer and the TiOlayer. The surface of the buffer layer is terminated with the TiOlayer. On the buffer layer, a LaAlOthin film layer is formed. The thin film layer includes a LaOlayer and an AlOlayer alternately laminated in order on the SrTiObuffer layer.
Susaki, Tomofumi. (2014). Electron emitting source and substrate for thin film growth (U.S. Patent No. 8742393). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8742393
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile