The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Jan. 08, 2010
Asa Frye, Hopewell Junction, NY (US);
Andrew Simon, Hopewell Junction, NY (US);
Asa Frye, Hopewell Junction, NY (US);
Andrew Simon, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers over at least one of a gate, a source, and a drain region of a field-effect-transistor (FET) through a physical vapor deposition (PVD) process, wherein the first metal layer is deposited using a first nickel target material containing platinum (Pt), and the second metal layer is deposited on top of the first metal layer using a second nickel target material containing no or less platinum than that in the first nickel target material; and annealing the first and second metal layers covering the FET to form a platinum-containing nickel-silicide layer at a top surface of the gate, source, and drain regions.