The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2014

Filed:

Feb. 23, 2007
Applicants:

Reijo Lappalainen, Hiltulanlahti, FI;

Vesa Myllymäki, Helsinki, FI;

Lasse Pulli, Helsinki, FI;

Jari Ruuttu, Billnäs, FI;

Juha Mäkitalo, Tammisaari, FI;

Inventors:

Reijo Lappalainen, Hiltulanlahti, FI;

Vesa Myllymäki, Helsinki, FI;

Lasse Pulli, Helsinki, FI;

Jari Ruuttu, Billnäs, FI;

Juha Mäkitalo, Tammisaari, FI;

Assignee:

Picodeon Ltd Oy, Helsinki, FI;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates generally to semiconductors, material layers within semiconductors, a production method of semiconductors, and a manufacturing arrangement for producing semiconductors. A semiconductor according to the invention includes at least one layer with a surface, produced by laser ablation, wherein the uniform surface area to be produced includes at least an area 0.2 dmand the layer has been produced by employing ultra short pulsed laser deposition wherein pulsed laser beam is scanned with a rotating optical scanner including at least one mirror for reflecting the laser beam.


Find Patent Forward Citations

Loading…