The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
May. 03, 2013
Fujitsu Semiconductor Limited, Yokohama, JP;
Masashi Shima, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device includes first, second and isolation regions; a first insulating film and gate electrode formed over the first region; a second insulating film and gate electrode formed over the second region; a first sidewall formed on a side of the first gate electrode and a second sidewall formed on a side of the second gate electrode; first source and drain regions formed adjacent opposite sides of the first gate electrode; second source region adjacent to the one side of the first gate electrode and overlapping the first source region, an impurity concentration of the second source region being different from an impurity of the first source region; a second drain region overlapping the first drain region and overlapping the first gate electrode; and a metal silicide formed on the first source region and the first drain region.