The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Apr. 29, 2009
Marcia Moore, Santa Barbara, CA (US);
Sten Heikman, Goleta, CA (US);
Marcia Moore, Santa Barbara, CA (US);
Sten Heikman, Goleta, CA (US);
Cree, Inc., Goleta, CA (US);
Abstract
A transistor device having a tiered gate electrode fabricated with methods using a triple layer resist structure. The triple layer resist stack is deposited on a semiconductor structure. An exposure pattern is written onto the resist stack using an e-beam writer, for example. The exposure dose is non-uniform across the device. Portions of the three resist layers are removed with a sequential development process, resulting in tiered resist structure. A conductive material is deposited to form the gate electrode. The resulting 'Air-T' gate also has a three-tiered structure. The fabrication process is well-suited for the production of gates small enough for use in millimeter wave devices.