The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
May. 24, 2012
Daisuke Arai, Kanagawa, JP;
Yoshito Nakazawa, Kanagawa, JP;
Ikuo Hara, Kanagawa, JP;
Tsuyoshi Kachi, Kanagawa, JP;
Yoshinori Hoshino, Kanagawa, JP;
Tsuyoshi Tabata, Kanagawa, JP;
Daisuke Arai, Kanagawa, JP;
Yoshito Nakazawa, Kanagawa, JP;
Ikuo Hara, Kanagawa, JP;
Tsuyoshi Kachi, Kanagawa, JP;
Yoshinori Hoshino, Kanagawa, JP;
Tsuyoshi Tabata, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
Techniques capable of improving the yield of IGBTs capable of reducing steady loss, turn-off time, and turn-off loss are provided. Upon formation of openings in an interlayer insulting film formed on a main surface of a substrate, etching of a laminated insulating film of a PSG film and an SOG film and a silicon oxide film is once stopped at a silicon nitride film. Then, the silicon nitride film and the silicon oxide film are sequentially etched to form the openings. As a result, the openings are prevented from penetrating through an n-type source layer and a p-type emitter layer having a thickness of 20 to 100 nm and reaching the substrate.