The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Dec. 22, 2011
Yusuke Yoshizumi, Itami, JP;
Shimpei Takagi, Osaka, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Masahiro Adachi, Osaka, JP;
Masaki Ueno, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Shinji Tokuyama, Osaka, JP;
Koji Katayama, Osaka, JP;
Takao Nakamura, Itami, JP;
Takatoshi Ikegami, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Shimpei Takagi, Osaka, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Masahiro Adachi, Osaka, JP;
Masaki Ueno, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Shinji Tokuyama, Osaka, JP;
Koji Katayama, Osaka, JP;
Takao Nakamura, Itami, JP;
Takatoshi Ikegami, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.