The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Jun. 27, 2012
Joo-han Kim, Yongin-si, KR;
Hwa-dong Jung, Seoul, KR;
Wan-soon Lim, Cheonan-si, KR;
Jee-hun Lim, Seongnam-si, KR;
Joo Seok Yeom, Seoul, KR;
Tae-kyung Yim, Seoul, KR;
Jae-hak Lee, Seoul, KR;
Hyuk Soon Kwon, Suwon-si, KR;
Hyoung Cheol Lee, Suwon-si, KR;
Jeong-ju Park, Seoul, KR;
Se-myung Kwon, Seongnam-si, KR;
So-young Koo, Incheon, KR;
Joo-Han Kim, Yongin-si, KR;
Hwa-Dong Jung, Seoul, KR;
Wan-Soon Lim, Cheonan-si, KR;
Jee-Hun Lim, Seongnam-si, KR;
Joo Seok Yeom, Seoul, KR;
Tae-Kyung Yim, Seoul, KR;
Jae-Hak Lee, Seoul, KR;
Hyuk Soon Kwon, Suwon-si, KR;
Hyoung Cheol Lee, Suwon-si, KR;
Jeong-Ju Park, Seoul, KR;
Se-Myung Kwon, Seongnam-si, KR;
So-Young Koo, Incheon, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.