The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Oct. 25, 2011
Jihyung Moon, Seoul, KR;
Hwanhee Jeong, Seoul, KR;
Kwangki Choi, Seoul, KR;
Juneo Song, Seoul, KR;
Sangyoul Lee, Seoul, KR;
JiHyung Moon, Seoul, KR;
HwanHee Jeong, Seoul, KR;
KwangKi Choi, Seoul, KR;
JuneO Song, Seoul, KR;
SangYoul Lee, Seoul, KR;
LG Innotek Co., Ltd., Seoul, KR;
Abstract
A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.