The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Jan. 15, 2013
Sumitomo Electric Industries, Ltd., Osaka, JP;
Tomokazu Katsuyama, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method for producing an integrated optical device includes the steps of growing a first stacked semiconductor layer including a first optical waveguiding layer, a first cladding layer, and a side-etching layer; etching the first stacked semiconductor layer through a first etching mask; growing, a second stacked semiconductor layer including a second optical waveguiding layer and a second cladding layer through the first etching mask; and forming a reverse-mesa ridge structure by etching the first and second cladding layers. The step of etching the first stacked semiconductor layer includes a step of forming an overhang by etching the side-etching layer by wet etching. In the step of growing the second stacked semiconductor layer, the second cladding layer is grown at a lower growth temperature and a higher V/III ratio comparing to those in the growth of the second optical waveguiding layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile