The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Feb. 20, 2013
Globalfoundries Inc., Grand Cayman, KY (US);
Christopher H. Clifford, San Francisco, CA (US);
Fan Jiang, Wilsonville, OR (US);
Pawitter Mangat, Clifton Park, NY (US);
Globalfoundries Inc., Grand Cayman, KY;
Abstract
Embodiments of the invention provide approaches for extreme ultraviolet (EUV) defect reconstruction and compensation repair. Specifically, a defect starting point of a defect of a mask is determined, and the performance of the mask with the defect is simulated. The simulated performance of the mask is compared to an empirical analysis of the mask to produce a profile of the mask and the defect. An initial image of the mask geometry, with the defect, is calculated, and then compared to a target image of the mask. From this, a compensated layout is generated. As such, embodiments provide a EUV fabrication system that detects and corrects for defects in the blanks and patterned masks to avoid or counteract the defect. Once a compensated pattern has been designed and successfully simulated, the mask may be patterned with the compensated design.