The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Mar. 25, 2010
Shoichi Kawashima, Kawasaki, JP;
Yasuhiro Nagatomo, Hachioji, JP;
Shoichi Kawashima, Kawasaki, JP;
Yasuhiro Nagatomo, Hachioji, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A nitride semiconductor surface-emitting laser includes a two-dimensional photonic crystal layer having a resonant mode in an in-plane direction. The surface-emitting laser includes an active layer, the two-dimensional photonic crystal layer, a semiconductor layer, and an electrode in this order. The two-dimensional photonic crystal layer contains p-type conductive InGaN (0≦x≦1) as a high-refractive-index medium. The semiconductor layer contains p-type conductive InGaN (0≦y≦1). The thickness tof the two-dimensional photonic crystal layer satisfies the relation of t≧(λ/n), wherein λ denotes the lasing wavelength, and ndenotes the effective refractive index of the resonant mode.