The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Oct. 17, 2012
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventors:

Wei Lin, Taipei, TW;

Kuo-Yi Cheng, Taipei, TW;

Chun-Yen Chang, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 7/00 (2013.01); G11C 2211/5621 (2013.01);
Abstract

A data writing method for writing data into a memory cell of a rewritable non-volatile memory module, and a memory controller and a memory storage apparatus using the same area provided. The method includes recording a wear degree of the memory cell and adjusting an initial write voltage and a write voltage pulse time corresponding to the memory cell based on the wear degree thereof. The method further includes programming the memory cell by applying the initial write voltage and the write voltage pulse time, thereby writing the data into the memory cell. Accordingly, data can be accurately stored into the rewritable non-volatile memory module by the method.


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