The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Nov. 25, 2009
Lianjun Liu, Chandler, AZ (US);
Sergio Pacheco, Scottsdale, AZ (US);
Francois Perruchot, Grenoble, FR;
Emmanuel Defay, Voreppe, FR;
Patrice Rey, Saint Jean de Moirans, FR;
Lianjun Liu, Chandler, AZ (US);
Sergio Pacheco, Scottsdale, AZ (US);
Francois Perruchot, Grenoble, FR;
Emmanuel Defay, Voreppe, FR;
Patrice Rey, Saint Jean de Moirans, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
Commissariar á l'Energie Atomique at aux Energies Alternatives (CEA), Paris, FR;
Abstract
A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.