The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Dec. 28, 2010
Applicants:
Tiesheng LI, San Jose, CA (US);
Lei Zhang, Chengdu, CN;
Inventors:
Tiesheng Li, San Jose, CA (US);
Lei Zhang, Chengdu, CN;
Assignee:
Monolithic Power Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present technology discloses a semiconductor die integrating a MOSFET device and a Schottky diode. The semiconductor die comprises a MOSFET area comprising the active region of MOSFET, a Schottky diode area comprising the active region of Schottky diode, and a termination area comprising termination structures. Wherein the Schottky diode area is placed between the MOSFET area and the termination area such that the Schottky diode area surrounds the MOSFET area.