The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Oct. 17, 2011
Toshitake Yaegashi, Yokohama, JP;
Toshitake Yaegashi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
First and second memory cells have first and second channels, first and second tunnel insulating films, first and second charge storage layers formed of an insulating film, first and second block insulating films, and first and second gate electrodes. A first select transistor has a third channel, a first gate insulating film, and a first gate electrode. The first channel includes a first-conductivity-type region and a second-conductivity-type region which is formed on at least a part of the first-conductivity-type region and whose conductivity type is opposite to the first conductivity type. The third channel includes the first-conductivity-type region and the second-conductivity-type region formed on the first-conductivity-type region. The number of data stored in the first memory cell is smaller than that of data stored in the second memory cell.