The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8735965 B1

PDF
Full Text
Expired
Date of Patent:
May. 27, 2014

Filed:

Mar. 15, 2012
Applicants:

Hanae Ishihara, Mie-ken, JP;

Mitsuru Sato, Mie-ken, JP;

Toru Matsuda, Mie-ken, JP;

Inventors:

Hanae Ishihara, Mie-ken, JP;

Mitsuru Sato, Mie-ken, JP;

Toru Matsuda, Mie-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, an electrode layer provided above the substrate, a first insulating layer provided on the electrode layer, a stacked body provided on the insulating layer, a memory film, a channel body layer, a channel body connecting portion and a second insulating layer. The stacked body has a plurality of conductive layers and a plurality of insulating film alternately stacked on each other. The memory film is provided on a sidewall of each of a pair of holes penetrating the stacked body in a direction of stacking the stacked body. The channel body layer is provided on an inner side of the memory film in each of the pair of the holes.


Find Patent Forward Citations

Ishihara, Hanae. (2014). Nonvolatile semiconductor memory device and method for manufacturing same (U.S. Patent No. 8735965). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8735965

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