The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Aug. 30, 2012
Applicants:

Sung Jin Whang, Yongin-si, KR;

Dong Sun Sheen, Yongin-si, KR;

Seung Ho Pyi, Yongin-si, KR;

Min Soo Kim, Guri-si, KR;

Inventors:

Sung Jin Whang, Yongin-si, KR;

Dong Sun Sheen, Yongin-si, KR;

Seung Ho Pyi, Yongin-si, KR;

Min Soo Kim, Guri-si, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device according to an embodiment of the present invention includes a vertical channel layer protruding upward from a semiconductor substrate, a tunnel insulating layer covering a sidewall of the vertical channel layer, a plurality of floating gates separated from each other and stacked one upon another along the vertical channel layer, and surrounding the vertical channel layer with the tunnel insulating layer interposed therebetween, a plurality of control gates enclosing the plurality of floating gates, respectively, and an interlayer insulating layer provided between the plurality of control gates.


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