The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Jul. 16, 2012
Applicant:

Phil Rutter, Stockport, GB;

Inventor:

Phil Rutter, Stockport, GB;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

Consistent with an example embodiment, there is a package that includes a first voltage terminal, and a second voltage terminal, a first die including a first MOSFET having a drain region electrically connected to the first voltage terminal and further having a source region, A second die is adjacent to the first die, the second die includes a second MOSFET having a drain region electrically connected to the source region of the first MOSFET and having a source region electrically connected to the second voltage terminal. The semiconductor package further includes a vertical capacitor having a first plate electrically connected to the drain region of the first MOSFET and a second plate electrically connected to the source region of the second MOSFET and the second plate is electrically insulated from the first plate by a dielectric material. The capacitor is integrated on the first die or the second die.


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