The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Aug. 31, 2012
Kohei Morizuka, Hyogo-ken, JP;
Kohei Morizuka, Hyogo-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a junction type field effect transistor includes a first conductive type semiconductor substrate, a first conductive type drift layer, a second conductive type gate region, a first conductive type channel layer, a first conductive type source region, a source electrode, a drain electrode, a second conductive type gate contact layer, and a gate electrode. The drift layer is provided on a first main surface of the semiconductor substrate. The gate region is provided on a surface of the drift layer. The channel layer is provided on the drift layer and the gate region. The source region is provided on a surface of the channel layer to face the gate region, and has an impurity concentration higher than the channel layer. The source electrode is provided on the channel layer with Schottky contact and on the source region with ohmic contact.