The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Jul. 14, 2011
Hiroyuki Fukuyama, Miyagi, JP;
Masayoshi Adachi, Miyagi, JP;
Akikazu Tanaka, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Hiroyuki Fukuyama, Miyagi, JP;
Masayoshi Adachi, Miyagi, JP;
Akikazu Tanaka, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Sumitomo Metal Mining Co., Ltd., Tokyo, JP;
Tohoku University, Sendai-shi, Miyagi, JP;
Abstract
Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.