The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Dec. 13, 2011
Dae-hwan Kim, Gyeonggi-Do, KR;
Byung-kook Choi, Gyeonggi-Do, KR;
Sul Lee, Gyeonggi-Do, KR;
Hoon Yim, Gyeonggi-Do, KR;
Dae-Hwan Kim, Gyeonggi-Do, KR;
Byung-Kook Choi, Gyeonggi-Do, KR;
Sul Lee, Gyeonggi-Do, KR;
Hoon Yim, Gyeonggi-Do, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C=Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z≧0).