The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Jan. 14, 2011
Applicants:

Chang-jung Kim, Yongin-si, KR;

I-hun Song, Yongin-si, KR;

Dong-hun Kang, Yongin-si, KR;

Young-soo Park, Yongin-si, KR;

Inventors:

Chang-jung Kim, Yongin-si, KR;

I-hun Song, Yongin-si, KR;

Dong-hun Kang, Yongin-si, KR;

Young-soo Park, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device may include a composite represented by Formula 1 below as an active layer.(GaO).(InO).(ZnO)  Formula 1 Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.


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Kim, Chang-jung. (2014). Zno based semiconductor devices and methods of manufacturing the same (U.S. Patent No. 8735882). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8735882

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