The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Jan. 08, 2011
Applicants:

Hiroyuki Minemura, Kokubunji, JP;

Yumiko Anzai, Saitama, JP;

Takahiro Morikawa, Tsukuba, JP;

Toshimichi Shintani, Kodaira, JP;

Yoshitaka Sasago, Tachikawa, JP;

Inventors:

Hiroyuki Minemura, Kokubunji, JP;

Yumiko Anzai, Saitama, JP;

Takahiro Morikawa, Tsukuba, JP;

Toshimichi Shintani, Kodaira, JP;

Yoshitaka Sasago, Tachikawa, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/06 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

For decreasing a recording current and suppressing a cross erase simultaneously, a three-dimensional phase-change memory for attaining higher sensitivity and higher reliability by the provision of a chalcogenide type interface layer is provided, in which an electric resistivity, a thermal conductivity, and a melting point of the material of the interface layer are selected appropriately, thereby improving the current concentration to the phase-change material and thermal and material insulation property with Si channel upon writing.


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