The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Sep. 08, 2010
Applicants:

Dirk Mueller, Berglech Gladbach, DE;

Manfred Schneegans, Vaterstetten, DE;

Sokratis Sgouridis, Annenheim, AT;

Inventors:

Dirk Mueller, Berglech Gladbach, DE;

Manfred Schneegans, Vaterstetten, DE;

Sokratis Sgouridis, Annenheim, AT;

Assignee:

Infineon Technologies AG, Neubiburg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved.


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