The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Oct. 24, 2011
Applicants:

Hermann Gruber, Woerth an der Donau, DE;

Thomas Gross, Sinzing, DE;

Andreas Peter Meiser, Sauerlach, DE;

Markus Zundel, Egmating, DE;

Inventors:

Hermann Gruber, Woerth an der Donau, DE;

Thomas Gross, Sinzing, DE;

Andreas Peter Meiser, Sauerlach, DE;

Markus Zundel, Egmating, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/301 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material.


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